Gain-Modulated Field Effect Transistor is also called:

Gain-Modulated Field Effect Transistor is also called an IGBT.

1.) Power BJT

• Bipolar Junction Transistor (BJT) is a three-terminal, three-layer, two-junction semiconductor device. Emitter(E), Base(B), and Collector(C) are the three terminals of the device.
• A BJT is capable of handling two polarities (holes and electrons), it can be used as a switch or as an amplifier and is also known as a current control device.

2.) Power MOSFET

• It is a voltage-controlled device and is constructed by three terminals: Source (S), Drain (D), and Gate (G).
• Power MOSFET is specially meant to handle high levels of power.
• These exhibit high switching speeds and can work much better in comparison with other normal MOSFETs in the case of low voltage levels.

3.) IGBT (Insulated Gate Bipolar Transistor)

• IGBT is a semiconductor device having three terminals: Gate (G), Emitter (E), and Collector (C).
• IGBT has been developed by combining the best qualities of both BJT and Power MOSFET.
• Hence, an IGBT exhibits a high input impedance as a MOSFET and has low ON-state power losses like a BJT.