Igbt Characteristics MCQ Quiz in বাংলা - Objective Question with Answer for Igbt Characteristics - বিনামূল্যে ডাউনলোড করুন [PDF]

The correct answer is option 4):(Reverse bias safe operating area)

Concept:

• RBSOA with reference to IGBT is Reverse bias safe operating area
• The Reverse Bias Safe Operating Area (RBSOA) is the range of current and voltage that an IGBT can be used without deterioration or destruction during the IGBT turn-off.
• The IGBT is developed by combining the characteristics of a BJT and a MOSFET
• The on-state losses of an IGBT are lesser than a MOSFET
• The switching frequency of IGBT is very high compared to BJT.
• So it is faster than BJT.
• The IGBT contains a parasitic thyristor

Explanation:

1. Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch and it is a voltage controlled device.

2. It is a 4 layer PNPN device that combines an insulated gate N-channel MOSFET input with a PNP BJT output in a type of Darlington configuration.

3. The IGBT has the good characteristics of both MOSFET and BJT i.e. it has low conduction loss and high switching speed.

Hence option (1) is correct

4. An insulated gate bipolar transistor can simply be  turned “ON” or “OFF” by activating and deactivating its Gate terminal.

5. Applying a positive input voltage signal across the gate and the emitter will keep the device in its “ON” state, while making the input gate signal zero or slightly negative will cause it to turn “OFF” in much the same way as a bipolar transistor or MOSFET. 

6. IGBTs are mainly used in power electronics applications such as inverters, converters and power supplies.

Additional Information 

The correct answer is option 3):(High voltage and low frequency)

Concept:

• IGBTs are extensively used in high-power AC and low-frequency applications such as in inverter circuits.
• MOSFETs are used in low-power DC applications like in power supplies
• IGBT has the ability to handle very high voltage and high power. MOSFET is capable of handling only low to medium voltage and power.
• IGBT can only be used for relatively low frequencies, up to a few kHz. MOSFET can be used for very high frequency (of the order of MHz) applications.
• When IGBT is conducting current, it produces comparatively low forward voltage drop. MOSFET produces a higher forward voltage drop than IGBT.
• For IGBT, the turn-off time is larger than MOSFET. The turn-off time of a MOSFET is smaller than IGBT.
• Hence option 3 is correct.

IGBT (Insulated Gate Bipolar Transistor)

• IGBT is a three-terminal device. The three terminals are Gate (G), Emitter (E), and Collector (C).
• An Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device that combines the advantages of MOSFETs and BJTs.
• Like a MOSFET, it has a high input impedance, which means it requires very little gate current to turn on.
• Like a BJT, it has low conduction (on-state) power loss due to its low saturation voltage.
• It has superior current conduction capability compared with the bipolar transistor.
• It also has excellent forward and reverse blocking capabilities.

The main drawbacks are:

• Switching speed is inferior to that of a Power MOSFET and superior to that of BJT.
• The collector current tails due to the minority carrier causes the turnoff speed to be slow.
• At the highest temperature, the maximum current rating goes down to 2/3 of the value.
• There is a possibility of latch-up due to the internal PNPN thyristor structure.

Explanation:

Insulated Gate Bipolar Transistors (IGBTs)

Definition: An Insulated Gate Bipolar Transistor (IGBT) is a semiconductor device that combines the high input impedance and high switching speeds of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) with the high current and low saturation voltage capability of Bipolar Junction Transistors (BJTs). This makes IGBTs suitable for high power applications requiring both high efficiency and fast switching.

Working Principle: The IGBT is a three-terminal power semiconductor device, with terminals labeled as collector (C), emitter (E), and gate (G). The device operates by the voltage applied to the gate, which controls the flow of current between the collector and emitter. When a positive voltage is applied to the gate, it creates an electric field that allows current to flow from the collector to the emitter, effectively turning the device on. Removing the voltage from the gate turns the device off.

Advantages:

• High Efficiency: IGBTs have superior on-state characteristics, meaning they exhibit low on-state voltage drops, leading to reduced conduction losses and higher efficiency.
• Good Switching Speed: While not as fast as MOSFETs, IGBTs have good switching speed, which is sufficient for many high power applications.
• High Current Capability: IGBTs can handle high currents, making them suitable for applications such as motor drives, inverters, and power supplies.
• High Voltage Capability: IGBTs can operate at high voltages, which is beneficial for industrial and traction applications.

Disadvantages:

• Switching Losses: Although IGBTs have good switching speed, they are not as fast as MOSFETs, leading to higher switching losses in high-frequency applications.
• Complex Gate Drive Requirements: IGBTs require more complex gate drive circuits compared to BJTs, which can add to the design complexity.

Applications: IGBTs are widely used in applications where high efficiency and high power handling are required. Some common applications include:

• Motor drives and controls
• Inverters for renewable energy systems (e.g., solar inverters)
• Electric vehicle powertrains
• Uninterruptible power supplies (UPS)
• Induction heating and welding equipment

Correct Option Analysis:

The correct option is:

Option 3: Superior on-state characteristics and good switching speed

This option accurately describes the characteristics of IGBTs. They exhibit superior on-state characteristics, which means they have low on-state voltage drops leading to high efficiency. Additionally, they have good switching speed, making them suitable for a wide range of high power applications.

Additional Information

To further understand the analysis, let’s evaluate the other options:

Option 1: Inferior on-state characteristics and low switching speed

This description is incorrect for IGBTs. IGBTs are known for their superior on-state characteristics and relatively good switching speed. The statement suggesting inferior on-state characteristics and low switching speed does not accurately reflect the performance of IGBTs.

Option 2: Superior on-state characteristics but low switching speed

This option is partially correct but not entirely accurate. While IGBTs do have superior on-state characteristics, describing their switching speed as low is misleading. IGBTs have good switching speed, which is suitable for many high power applications, even though it may not be as fast as MOSFETs.

Option 4: Inferior on-state characteristics but good switching speed

This option is incorrect. IGBTs are characterized by superior on-state characteristics, not inferior ones. While they do have good switching speed, it is the combination of both superior on-state characteristics and good switching speed that defines their performance.

Conclusion:

Understanding the characteristics of IGBTs is crucial for selecting the appropriate device for high power applications. IGBTs offer a unique combination of superior on-state characteristics and good switching speed, making them highly efficient and suitable for various applications such as motor drives, inverters, and power supplies. Despite some limitations in switching speed compared to MOSFETs, IGBTs remain a popular choice due to their high current and voltage handling capabilities.