Match the two lists and choose the correct answer from the code given below:

List I

List II

(a) Current gain in common base

(i) 1 (ONE)

(b) Input impedance in common base

(ii) Less than unity

(c) Voltage gain in common collector

(iii) Very high ( 2 MΩ )

(d) Output impedance in common base

(iv) Lowest

This question was previously asked in
UGC NET Paper 2: Electronic Science Dec 2018 Official Paper
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  1. (a)-(i), (b)-(ii), (c)-(iii), (d)-(iv)
  2. (a)-(iii), (b)-(i), (c)-(iv), (d)-(ii)
  3. (a)-(iv), (b)-(iii), (c)-(ii), (d)-(i)
  4. (a)-(ii), (b)-(iv), (c)-(i), (d)-(iii)

Answer (Detailed Solution Below)

Option 4 : (a)-(ii), (b)-(iv), (c)-(i), (d)-(iii)
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Detailed Solution

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(a) Current gain in common base - Less than unity

(b) Input impedance in common base - Lowest

(c) Voltage gain in common collector - 1 (ONE)

(d) Output impedance in common base - Very high ( 2 MΩ )

Common base configuration:

SSC JE EE basic electronics 2 D9

Input Terminal Emitter – Base (EB)

Output Terminal Collector – Base (CB)

Since for Amplification Application in BJT

EB Junction → Forward Biased (Low Impedance)

CB Junction → Reversed Biased (High Impedance)

Various transistor configurations and their characteristics are shown in the table

Parameters

   Common Emitter(CE)

 Common Collector(CC)

     Common Base(CB)

Current gain (AI)

High

High

Low (unity)

Voltage gain (AV)

High

Low (unity)

High

Input resistance (Ri)

Medium

High

Low

Output resistance (R0)

Medium

Low

High

Phase change

180°

Hence, Option 4 is correct.

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